前瞻電阻式記憶體元件之新結構與新應用研究( I )

Full metadata record

DC Field	Value	Language
dc.contributor.author	施敏	en_US
dc.contributor.author	SZE SIMON MIN	en_US
dc.date.accessioned	2014-12-13T10:29:04Z	-
dc.date.available	2014-12-13T10:29:04Z	-
dc.date.issued	2014	en_US
dc.identifier.govdoc	MOST103-2221-E009-175	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/88847	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=8349434&docId=444792	en_US
dc.description.sponsorship	科技部	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	前瞻電阻式記憶體元件之新結構與新應用研究( I )	zh_TW
dc.title	Study on Novel Structures and New Applications in Advanced Resistive Random Access Memory (I)	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程學系及電子研究所	zh_TW
Appears in Collections:	Research Plans