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dc.contributor.authorChen, C. C.en_US
dc.contributor.authorChen, Y. C.en_US
dc.contributor.authorChen, Chin-Taen_US
dc.contributor.authorHsiao, Hsu-Liangen_US
dc.contributor.authorChang, Chia-Chien_US
dc.contributor.authorCheng, Y. T.en_US
dc.contributor.authorWu, Mount-Learnen_US
dc.date.accessioned2014-12-08T15:11:35Z-
dc.date.available2014-12-08T15:11:35Z-
dc.date.issued2011-05-01en_US
dc.identifier.issn1077-260Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JSTQE.2010.2090037en_US
dc.identifier.urihttp://hdl.handle.net/11536/8894-
dc.description.abstractThis paper introduces a method combining a general electrothermal network p-model in system level and the associated mathematical technique, Green's theorem, in terms of the adopted materials and system geometries to build up an equivalent electrothermal circuit model (EETCM) for efficient thermal analysis and behavior prediction in a thermal system. Heat conduction and convection equations in integral forms are derived using the theorem and successfully applied for the thermal analysis of a 3-D optical stack, vertical-cavity surface-emitting lasers (VCSELs) on a silicon optical bench. The complex stack structure in conventional simulators can be greatly simplified using the method by well-predicting probable heat flow paths, and the simplification can eventually achieve the goal of CPU time saving without having complicated mesh designing or scaling. By comparing the data from the measurement, the finite-element simulation, and the method calculation shows that an excellent temperature match within +/-similar to 0.5 degrees C and 90% CPU time saving can be realized.en_US
dc.language.isoen_USen_US
dc.subject3-D optical stacksen_US
dc.subjectGreen's theoremen_US
dc.subjectconductionen_US
dc.subjectconvectionen_US
dc.subjectequivalent electrothermal circuit model (EETCM)en_US
dc.subjectgeneral electrothermal network pi-modelen_US
dc.subjectheat transfer equationen_US
dc.subjectsilicon optical bench (SiOB)en_US
dc.subjectthermal managementen_US
dc.subjectvertical-cavity surface-emitting laser (VCSEL)en_US
dc.titleThermal Analysis: VCSELs on an SiOBen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JSTQE.2010.2090037en_US
dc.identifier.journalIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICSen_US
dc.citation.volume17en_US
dc.citation.issue3en_US
dc.citation.spage531en_US
dc.citation.epage539en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000291403100006-
dc.citation.woscount1-
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