完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.author | 張俊彥 | en_US |
| dc.contributor.author | CHANG CHUN-YEN | en_US |
| dc.date.accessioned | 2014-12-13T10:29:17Z | - |
| dc.date.available | 2014-12-13T10:29:17Z | - |
| dc.date.issued | 2000 | en_US |
| dc.identifier.govdoc | NSC89-2213-E009-131 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/89077 | - |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=542203&docId=99611 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 超高真空化學氣相沈積法 | zh_TW |
| dc.subject | 薄膜電晶體 | zh_TW |
| dc.subject | 複晶矽 | zh_TW |
| dc.subject | UHVIVD | en_US |
| dc.subject | Thin film transistor (TFT) | en_US |
| dc.subject | Polysilicon | en_US |
| dc.title | 超高真空化學氣相沉積低溫新穎複晶矽薄膜電晶體之製作與可靠度的研究---總計畫(II) | zh_TW |
| dc.title | Study of UHVCVD Deposited Poly-Si TFTs with Low Temperature Gate Dielectric and Novel Structure (II) | en_US |
| dc.type | Plan | en_US |
| dc.contributor.department | 交通大學電機與控制工程研究所 | zh_TW |
| 顯示於類別： | 研究計畫 | |
