Growth and characterization of Cd1-x-yZnxMnyTe crystals

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DC Field	Value	Language
dc.contributor.author	Chou, WC	en_US
dc.contributor.author	Chen, FR	en_US
dc.contributor.author	Chiang, TY	en_US
dc.contributor.author	Shin, HY	en_US
dc.contributor.author	Sun, CY	en_US
dc.contributor.author	Lin, CM	en_US
dc.contributor.author	ChernYu, K	en_US
dc.contributor.author	Tsai, CT	en_US
dc.contributor.author	Chuu, DS	en_US
dc.date.accessioned	2014-12-08T15:02:12Z	-
dc.date.available	2014-12-08T15:02:12Z	-
dc.date.issued	1996-12-01	en_US
dc.identifier.issn	0022-0248	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/S0022-0248(96)00452-6	en_US
dc.identifier.uri	http://hdl.handle.net/11536/892	-
dc.description.abstract	The Cd1-x-yZnxMnyTe crystals, having potential in the development of magnetic field sensitive devices, were grown by the temperature gradient solution method at 940 degrees C. All crystals were p-type with resistivity of 10(7) Omega . cm. They have novel magneto-optical properties, and could be substitutes for the Cd1-xZnxTe ternary compounds in certain optoelectronic/integrated-optical device applications.	en_US
dc.language.iso	en_US	en_US
dc.title	Growth and characterization of Cd1-x-yZnxMnyTe crystals	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/S0022-0248(96)00452-6	en_US
dc.identifier.journal	JOURNAL OF CRYSTAL GROWTH	en_US
dc.citation.volume	169	en_US
dc.citation.issue	4	en_US
dc.citation.spage	747	en_US
dc.citation.epage	751	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
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