A switching-band CMOS low-noise amplifier for 6-11GHz MB-OFDM UWB wireless radio system

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Huang, Zhe-Yang	en_US
dc.contributor.author	Huang, Che-Cheng	en_US
dc.date.accessioned	2014-12-08T15:11:39Z	-
dc.date.available	2014-12-08T15:11:39Z	-
dc.date.issued	2007	en_US
dc.identifier.isbn	978-1-4244-1131-3	en_US
dc.identifier.uri	http://hdl.handle.net/11536/8935	-
dc.description.abstract	This paper presents a low-power low-noise amplifier (LNA) with switching bands for MB-OFDM Group-C and Group-D ultra-wideband wireless radio system. The LNA is designed and implemented in TSMC 0.18um RF CMOS process. Simulation results show that power gain of 12.4dB, input and output matching lower then -8.5dB and -14.5dB, and a minimum NF of 4.0dB can be achieved., while the power consumption is 11.2 mW through 1.8V power supply.	en_US
dc.language.iso	en_US	en_US
dc.title	A switching-band CMOS low-noise amplifier for 6-11GHz MB-OFDM UWB wireless radio system	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	ASICON 2007: 2007 7TH INTERNATIONAL CONFERENCE ON ASIC, VOLS 1 AND 2, PROCEEDINGS	en_US
dc.citation.spage	411	en_US
dc.citation.epage	414	en_US
dc.contributor.department	電信工程研究所	zh_TW
dc.contributor.department	Institute of Communications Engineering	en_US
dc.identifier.wosnumber	WOS:000253449900099	-
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