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dc.contributor.author張俊彥en_US
dc.contributor.authorCHANG CHUN-YENen_US
dc.date.accessioned2014-12-13T10:29:34Z-
dc.date.available2014-12-13T10:29:34Z-
dc.date.issued2013en_US
dc.identifier.govdocNSC102-2623-E009-004-ETzh_TW
dc.identifier.urihttp://hdl.handle.net/11536/89422-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=2858475&docId=405804en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject氮化鎵zh_TW
dc.subject發光二極體zh_TW
dc.subject效率驟降zh_TW
dc.subject化學性濕蝕刻剝離法zh_TW
dc.subjectGaNen_US
dc.subjectLEDen_US
dc.subjectDroopen_US
dc.subjectChemical Lift-offen_US
dc.title具有奈米級微結構表面之高亮度垂直式氮化鎵發光二極體元件製作(II)-總計畫暨子計畫一:利用磊晶結構優化改善高功率發光二極體的效率下降(II)zh_TW
dc.titleImprovement of Efficiency Droop in High Power Light-emitting Diodes by Optimization of Epitaxial Structure (II)en_US
dc.typePlanen_US
dc.contributor.department國立交通大學電子工程學系及電子研究所zh_TW
Appears in Collections:Research Plans