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dc.contributor.author陳明哲en_US
dc.contributor.authorCHEN MING-JERen_US
dc.date.accessioned2014-12-13T10:29:37Z-
dc.date.available2014-12-13T10:29:37Z-
dc.date.issued2013en_US
dc.identifier.govdocNSC100-2221-E009-017-MY3zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/89471-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=2866874&docId=408142en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject金屬閘zh_TW
dc.subject高介質zh_TW
dc.subject應變zh_TW
dc.subject場效電晶體zh_TW
dc.subject鰭狀場效電晶體zh_TW
dc.subject高等元件物理zh_TW
dc.subject高等缺陷物理zh_TW
dc.subject高等可靠性物理zh_TW
dc.subject閘穿隧電流zh_TW
dc.subject遷移率zh_TW
dc.subject隨機電報雜訊zh_TW
dc.subject遠聲子散射zh_TW
dc.subject遠庫倫散射zh_TW
dc.subject量子模擬器zh_TW
dc.subject負偏壓溫度不穩定zh_TW
dc.subject正偏壓溫度不穩定zh_TW
dc.subjectMetal Gateen_US
dc.subjectHigh-ken_US
dc.subjectStrainen_US
dc.subjectFETen_US
dc.subjectFinFETen_US
dc.subjectadvanced device physicsen_US
dc.subjectadvanced defect physicsen_US
dc.subjectadvanced reliability physicsen_US
dc.subjectgate tunneling currenten_US
dc.subjectmobilityen_US
dc.subjectrandom telegraph signals (RTS)en_US
dc.subjectremote phonon scatteringen_US
dc.subjectremote Coulomb scatteringen_US
dc.subjectquantum simulaten_US
dc.title閘穿隧電流, 遷移率, 及隨機電報雜訊作為金屬閘高介質應變鰭狀及平面場效電晶體物理機制之測試載具研究zh_TW
dc.titleGate Tunneling Current, Mobility, and Random Telegraph Signals as Test Vehicles of the Physical Mechanisms in Strained FinFETs and Planar MOSFETs with Metal Gate High-k Dielectricsen_US
dc.typePlanen_US
dc.contributor.department國立交通大學電子工程學系及電子研究所zh_TW
顯示於類別：研究計畫


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