氮銦化鎵/氮化鎵量子井及量子點結構製備及光電物理性質研究

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DC Field	Value	Language
dc.contributor.author	陳衛國	en_US
dc.contributor.author	WEI-KUOCHEN	en_US
dc.date.accessioned	2014-12-13T10:29:43Z	-
dc.date.available	2014-12-13T10:29:43Z	-
dc.date.issued	2000	en_US
dc.identifier.govdoc	NSC89-2112-M009-061	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/89586	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=545415&docId=100393	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	氮銦化鎵/氮化鎵量子井及量子點結構製備及光電物理性質研究	zh_TW
dc.title	Epitaxy and Characterizations of InGaN/GaN Quantum Well and Dot Structures	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子物理學系	zh_TW
Appears in Collections:	Research Plans

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