标题: Radiative recombination of indirect exciton in type-II ZnSeTe/ZnSe multiple quantum wells
作者: Chia, Chin-Hau
Fan, Wen-Chung
Lin, Yen-Chen
Chou, Wu-Ching
电子物理学系
Department of Electrophysics
关键字: ZnSeTe;Type-II quantum well;Time-resolved photoluminescence;Exciton
公开日期: 1-五月-2011
摘要: The tunability of the emission energy, oscillator strength and photoluminescence (PL) efficiency by varying the well thickness and excitation density was demonstrated in the ZnSe(0.8)Te(0.2)/ZnSe multiple quantum wells. A significant blueshift about 260 meV of the PL peak energy was observed as the well width decreased from 5 to 1 nm. An extraordinary long lifetime (300 ns) of the recombination for the widest sample was detected. The binding energy of the indirect excitons is determined as 12 meV for the thinnest sample. The reduction of PL efficiency by thermal energy is greatly suppressed by employing a high excitation power. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jlumin.2010.12.031
http://hdl.handle.net/11536/8970
ISSN: 0022-2313
DOI: 10.1016/j.jlumin.2010.12.031
期刊: JOURNAL OF LUMINESCENCE
Volume: 131
Issue: 5
起始页: 956
结束页: 959
显示于类别:Articles


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