完整後設資料紀錄
DC 欄位語言
dc.contributor.author莊紹勳en_US
dc.contributor.authorChung Steve Sen_US
dc.date.accessioned2014-12-13T10:29:56Z-
dc.date.available2014-12-13T10:29:56Z-
dc.date.issued2006en_US
dc.identifier.govdocNSC95-2221-E009-273zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/89823-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=1309500&docId=241987en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.title張力型矽鍺奈米CMOS元件通道工程及可靠性關鍵問題研究(II)zh_TW
dc.titleKey Issues of Channel Engineering and Reliability for Strained-Si/SiGe Nanometer Gate Length CMOS Devices(II)en_US
dc.typePlanen_US
dc.contributor.department交通大學電子工程系zh_TW
顯示於類別:研究計畫