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dc.contributor.authorLiao, Yu-Huaien_US
dc.contributor.authorClimente, Juan I.en_US
dc.contributor.authorCheng, Shun-Jenen_US
dc.date.accessioned2019-04-03T06:36:40Z-
dc.date.available2019-04-03T06:36:40Z-
dc.date.issued2011-04-22en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.83.165317en_US
dc.identifier.urihttp://hdl.handle.net/11536/8987-
dc.description.abstractWe present a comprehensive theoretical investigation of spin relaxation processes of excitons in photoexcited self-assembled quantum dots. The exciton spin relaxations are considered between dark- and bright-exciton states via the channels created by various spin-admixture mechanisms, including electron Rashba and Dresselhaus spin-orbital couplings (SOCs), hole linear and hole cubic SOCs, and electron hyperfine interactions, incorporated with single-and double-phonon processes. The hole-Dresselhaus SOC is identified as the dominant spin-admixture mechanism, leading to relaxation rates as fast as similar to 10(-2) ns(-1), consistent with recent observations. Moreover, due to significant electron-hole exchange interactions, single-phonon processes are unusually dominant over two-phonon ones in a photoexcited dot even at temperatures as high as 15K.en_US
dc.language.isoen_USen_US
dc.titleDominant channels of exciton spin relaxation in photoexcited self-assembled (In,Ga)As quantum dotsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.83.165317en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume83en_US
dc.citation.issue16en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000290114400006en_US
dc.citation.woscount14en_US
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