標題: | High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate |
作者: | Tang, Shih-Hsuan Chang, Edward Yi Hudait, Mantu Maa, Jer-Shen Liu, Chee-Wee Luo, Guang-Li Trinh, Hai-Dang Su, Yung-Hsuan 材料科學與工程學系 電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics |
公開日期: | 18-四月-2011 |
摘要: | High-quality epitaxial Ge films were grown on GaAs substrates by ultrahigh vacuum chemical vapor deposition. High crystallinity and smooth surface were observed for these films by x-ray diffraction, transmission electron microscopy, and atomic force microscopy. Direct band gap emission (1550 nm) from this structure was detected by photoluminescence. Valence band offset of 0.16 eV at the Ge/GaAs interface was measured by x-ray photoelectron spectroscopy. N-type arsenic self-doping of 10(18)/cm(-3) in the grown Ge layers was determined using electrochemical capacitance voltage measurement. This structure can be used to fabricate p-channel metal-oxide-semiconductor field-effect transistor for the integration of Ge p-channel device with GaAs n-channel electronic device. (C) 2011 American Institute of Physics. [doi:10.1063/1.3580605] |
URI: | http://dx.doi.org/10.1063/1.3580605 http://hdl.handle.net/11536/8992 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.3580605 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 98 |
Issue: | 16 |
結束頁: | |
顯示於類別: | 期刊論文 |