GaNAs與GaInNAs的磊晶成長與特性研究

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	李威儀	en_US
dc.contributor.author	LEE WEI-I	en_US
dc.date.accessioned	2014-12-13T10:30:10Z	-
dc.date.available	2014-12-13T10:30:10Z	-
dc.date.issued	2000	en_US
dc.identifier.govdoc	NSC89-2112-M009-011	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/90008	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=523567&docId=95079	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	氮砷化鎵	zh_TW
dc.subject	氮砷化銦鎵	zh_TW
dc.subject	砷化鎵	zh_TW
dc.subject	有機金屬氣相磊晶法	zh_TW
dc.subject	深能階缺陷	zh_TW
dc.subject	長波長雷射	zh_TW
dc.subject	量子井	zh_TW
dc.subject	GaNAs	en_US
dc.subject	GaInNAs	en_US
dc.subject	GaAs	en_US
dc.subject	Metalorganic chemical vapor deposition (MOCVD)	en_US
dc.subject	Deep level defect	en_US
dc.subject	Long-wavelength laser	en_US
dc.subject	Quantum well	en_US
dc.subject	Dimethylhydrazine (DMHy)	en_US
dc.subject	DLT	en_US
dc.title	GaNAs與GaInNAs的磊晶成長與特性研究	zh_TW
dc.title	Epitaxial Growth and Characterization Study of GaNAs and GaInNAs	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子物理系	zh_TW
顯示於類別：	研究計畫

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