标题: | 氮化铝铟/氮化家之绿能应用功率元件开发 Development of AlInN/GaN Power Device for Green Energy Applications |
作者: | 张翼 CHANG EDWARD YI 国立交通大学材料科学与工程学系(所) |
关键字: | 氮化铝铟;氮化镓;高电子迁移率电晶体;有机化学气相沉积;AlInN;GaN;HEMT;MOCVD |
公开日期: | 2013 |
摘要: | 因环保意识的抬头,近年来,对于绿色能源科技及节能应用上,高功率电子元件扮演着相当关键性的角色。在此需求之下,由于氮化镓(GaN)具备低导通电阻和高崩溃电压的材料特性,利用氮化镓所制造而成的高电子迁移率电晶体(HEMT)近年来已经成为高功率电子元件的不二人选。传统的GaN HEMT 结构是由AlGaN和GaN组合而成,由于AlGaN和GaN之间存在着晶格常数的差异及材料本身原子排列的不对称性,而在界面处引发了自发性(Spontaneous)及压电(Piezoelectric)极性,使得在界面处形成了高密度(~1*1013 cm-2)的二维电子气层(2DEG)。在高功率元件应用方面,一般来说,为了提升元件的功率,所采取的方式是增加在AlGaN中Al含量,以提高二维电子层中的载子密度,然而一但Al的含量超过30%,存在于AlGaN中的应力却会开始让AlGaN晶体品质往下降,甚至表面会出现裂痕,这个缺点成为了AlGaN/GaN HEMT发展上的限制。为了解决此限制,利用AlInN取代AlGaN当能障层即可有效的解决应力的问题,理由是因为当铟的含量被控制在~17%时,AlInN的晶格常数是和氮化镓一致的,因此可获得无应力(strain-free)状态的AlInN。此外即便在界面处无压电极性的产生,AlInN材料亦能提供比AlGaN还要大的自发性极性。因此在二维电子气层中提供了更高浓度的载子(>2*1013 cm-2)。所以在材料和元件参数最佳化下,利用AlInN/GaN所制造出来的高功率元件,其功能较传统的AlGaN/GaN为佳是可被期待的。本计划预计将利用金属有机化学气相沉积(MOCVD)方式,把AlInN/GaN材料成长于矽基板上以更符合经济效应,并制作输出功率大于1kW的单颗元件,以验证此材料符合未来功率元件的应用开发。 High efficiency power device is one of the key factors for green energy applications and sustainable management. In this regard, the GaN high electron mobility transistor (HEMT) with a low turn-on-resistance and high breakdown voltage is the most potential candidate for future power electronics. The advantages of a conventional GaN HEMT, consists of an AlGaN/GaN structure, for power handling attribute to the wide bandgap material property and high carrier concentration (~1x103 cm-2) in the 2-diamensional electron gas (2DEG) channel resulting. However, the inherent strain in the AlGaN barrier layer imposes limitations on the device performance and reliability. The degradation or cracking of AlGaN barrier layer, which may occur for Al content larger than 30%, will limit the generation for higher carrier concentration in the 2DEG channel. Therefore, the development of AlInN as barrier layer offers a potential solution to the strain problem since it can be grown lattice-matched to GaN with In~17%. Furthermore, the strain-free AlInN barrier with larger spontaneous polarization also induces much higher carrier density (>2x1013 cm-2) in the 2DEG channel. Therefore, higher power density can be expected from the AlInN/GaN HEMT if other material and device parameters are optimized. In this study, the AlInN/GaN material will be grown on Si substrate by using metal-organic chemical vapor deposition (MOCVD) system. GaN HEMT on Si substrate is important for the development of high efficiency and cost effective devices. With the optimized growth conditions and device fabrication techniques, we hope to demonstrate an AlInN/GaN HEMT device with output power larger than 1kW. |
官方说明文件#: | NSC101-2221-E009-173-MY2 |
URI: | http://hdl.handle.net/11536/90043 https://www.grb.gov.tw/search/planDetail?id=2848875&docId=403167 |
显示于类别: | Research Plans |