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dc.contributor.authorLiu, Yu-Shenen_US
dc.contributor.authorHsu, Bailey C.en_US
dc.contributor.authorChen, Yu-Changen_US
dc.date.accessioned2014-12-08T15:11:45Z-
dc.date.available2014-12-08T15:11:45Z-
dc.date.issued2011-04-07en_US
dc.identifier.issn1932-7447en_US
dc.identifier.urihttp://dx.doi.org/10.1021/jp110920qen_US
dc.identifier.urihttp://hdl.handle.net/11536/9010-
dc.description.abstractWe propose a thermoelectric cooling device based on an atomic-sized junction. Using first-principles approaches, we investigate the working conditions and the coefficient of performance (COP) of an atomic-scale electronic refrigerator where the effects of the phonon's thermal current and local heating are included. It is observed that the functioning of the thermoelectric nanorefrigerator is restricted to a narrow range of driving voltages. Compared with the bulk thermoelectric system with the overwhelmingly irreversible Joule heating, the 4-Al atomic refrigerator has a higher efficiency than a bulk thermoelectric refrigerator with the same thermoelectric figure of merit (ZT) due to suppressed local heating via the quasi-ballistic electron transport and small driving voltages. Quantum nature due to the size minimization offered by atomic-level control of properties facilitates electron cooling beyond the expectation of the conventional thermoelectric device theory.en_US
dc.language.isoen_USen_US
dc.titleEffect of Thermoelectric Cooling in Nanoscale Junctionsen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/jp110920qen_US
dc.identifier.journalJOURNAL OF PHYSICAL CHEMISTRY Cen_US
dc.citation.volume115en_US
dc.citation.issue13en_US
dc.citation.spage6111en_US
dc.citation.epage6125en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000288885900112-
dc.citation.woscount11-
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