高電容比值之矽可變電容二極體

Full metadata record

DC Field	Value	Language
dc.contributor.author	趙天生	en_US
dc.contributor.author	TIEN-SHENGCHAO	en_US
dc.date.accessioned	2014-12-13T10:30:20Z	-
dc.date.available	2014-12-13T10:30:20Z	-
dc.date.issued	2005	en_US
dc.identifier.govdoc	NSC94-2622-E009-010-CC3	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/90156	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=1084661&docId=204229	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	高電容比值之矽可變電容二極體	zh_TW
dc.title	Hyper Abrupt Silicon Varactor Diodes	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子物理系	zh_TW
Appears in Collections:	Research Plans