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dc.contributor.authorWu, Chi-Tingen_US
dc.contributor.authorLee, Wen-Hsien_US
dc.contributor.authorChang, Shih-Chiehen_US
dc.contributor.authorCheng, Yi-Lungen_US
dc.contributor.authorWang, Ying-Langen_US
dc.date.accessioned2014-12-08T15:11:45Z-
dc.date.available2014-12-08T15:11:45Z-
dc.date.issued2011-04-01en_US
dc.identifier.issn1941-4900en_US
dc.identifier.urihttp://dx.doi.org/10.1166/nnl.2011.1151en_US
dc.identifier.urihttp://hdl.handle.net/11536/9018-
dc.description.abstractIn this study, the effects of TiN(x) capping layers on the thermal stability of nickel silicides have been investigated in a rapid thermal annealing (RTA) process. Various TiN(x) films were deposited on the nickel film by different N(2) flow rates. It was found that the TIN(x) capping layer could improve the thermal stability of nickel silicides and suppress silicide agglomeration. The TIN(x) film deposited with higher N(2) flow rates had better thermal stability than those with lower N(2) flow rates. The corrosion behaviors of the TIN(x) films deposited with various N(2) flow rates and nickel films in the H(2)SO(4):H(2)O(2) (4:1) solution were investigated. We found that the corrosion currents (I(corr)) of the nickel and NiSi films were much higher than those of the TiN(x) films, while the I(corr) of the TiN(x) films deposited with higher N(2) flow rates was much lower than that of the TiN(x) films deposited with lower N(2) flow rates.en_US
dc.language.isoen_USen_US
dc.titleEnhancement of the Thermal Stability of TiN(x) Capping Layer on the Nickel Silicidesen_US
dc.typeArticleen_US
dc.identifier.doi10.1166/nnl.2011.1151en_US
dc.identifier.journalNANOSCIENCE AND NANOTECHNOLOGY LETTERSen_US
dc.citation.volume3en_US
dc.citation.issue2en_US
dc.citation.spage272en_US
dc.citation.epage275en_US
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
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