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dc.contributor.authorChen, Hsiao-Yunen_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2014-12-08T15:11:46Z-
dc.date.available2014-12-08T15:11:46Z-
dc.date.issued2011-04-01en_US
dc.identifier.issn0884-2914en_US
dc.identifier.urihttp://dx.doi.org/10.1557/jmr.2011.25en_US
dc.identifier.urihttp://hdl.handle.net/11536/9019-
dc.description.abstractThermomigration in Pb-free SnAg solder alloys is investigated during accelerated electromigration tests under 9.7 x 10(3) A/cm(2) at 150 degrees C. It is found that Cu-Sn intermetallic compounds (IMCs) migrate toward the cold end on the substrate side and, as a result, voids accumulate in the chip side for the bump with current flowing from the substrate end to the chip end. Theoretical calculations indicate that the thermomigration force is greater than the electromigration force at a thermal gradient above 400 degrees C/cm for this stressing condition. Copper atoms may migrate against current flow and become the dominant diffusion species. On the other hand, Ni-Sn IMCs did not migrate even under a huge thermal gradient of 1400 degrees C/cm. These findings provide more understanding on the thermomigration of metallization materials in flip-chip solder joints.en_US
dc.language.isoen_USen_US
dc.titleThermomigration of Cu-Sn and Ni-Sn intermetallic compounds during electromigration in Pb-free SnAg solder jointsen_US
dc.typeArticleen_US
dc.identifier.doi10.1557/jmr.2011.25en_US
dc.identifier.journalJOURNAL OF MATERIALS RESEARCHen_US
dc.citation.volume26en_US
dc.citation.issue8en_US
dc.citation.spage983en_US
dc.citation.epage991en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000292829000005-
dc.citation.woscount10-
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