Full metadata record
DC FieldValueLanguage
dc.contributor.authorWu, K. H.en_US
dc.contributor.authorChen, H-Jen_US
dc.contributor.authorChen, Y. T.en_US
dc.contributor.authorHsieh, C. C.en_US
dc.contributor.authorLuo, C. W.en_US
dc.contributor.authorUen, T. M.en_US
dc.contributor.authorJuang, J. Y.en_US
dc.contributor.authorLin, J-Yen_US
dc.contributor.authorKobayashi, T.en_US
dc.contributor.authorGospodinov, M.en_US
dc.date.accessioned2014-12-08T15:11:47Z-
dc.date.available2014-12-08T15:11:47Z-
dc.date.issued2011-04-01en_US
dc.identifier.issn0295-5075en_US
dc.identifier.urihttp://dx.doi.org/10.1209/0295-5075/94/27006en_US
dc.identifier.urihttp://hdl.handle.net/11536/9032-
dc.description.abstractIn this paper, the (001)-oriented hexagonal YMnO(3) (h-YMO) thin films with various nominal strain states were deposited on MgO(100), MgO(111) and YSZ(111) substrates by pulsed laser deposition. The ultrafast dynamics probed by wavelength-tunable femtosecond pump-probe spectroscopy was performed to disclose the effects of the epitaxial strain on the electronic structure and associated magnetism. Analyses based on the measured transient-reflectivity-change (Delta R/R) curves revealed that while the magnitude of the on-site Mn d-d transition energy E(dd)(T) changes only slightly with the variation of the lattice constant ratio c/a, a marked shift in the antiferromagnetic (AFM) Neel temperature T(N) was observed and the direction of shift was dependent on the type of strain. The possible mechanism for the observed strain effect on the AFM ordering is discussed. Copyright (C) EPLA, 2011en_US
dc.language.isoen_USen_US
dc.titleMarked enhancement of Neel temperature in strained YMnO(3) thin films probed by femtosecond spectroscopyen_US
dc.typeArticleen_US
dc.identifier.doi10.1209/0295-5075/94/27006en_US
dc.identifier.journalEPLen_US
dc.citation.volume94en_US
dc.citation.issue2en_US
dc.citation.spageen_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
Appears in Collections:Articles