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dc.contributor.authorChen, Cheng-Changen_US
dc.contributor.authorChiu, Ching-Hsuehen_US
dc.contributor.authorYang, Yi-Chunen_US
dc.contributor.authorShih, M. H.en_US
dc.contributor.authorChen, Jun-Rongen_US
dc.contributor.authorLi, Zhen-Zuen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorLu, Tien-Changen_US
dc.date.accessioned2014-12-08T15:11:47Z-
dc.date.available2014-12-08T15:11:47Z-
dc.date.issued2011-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.50.04DG09en_US
dc.identifier.urihttp://hdl.handle.net/11536/9034-
dc.description.abstractIn this paper, the characteristics of GaN-based two-dimensional (2D) photonic crystal bandedge coupling operation with an ultraviolet AlN/AlGaN distributed Bragg reflector (DBR) have been investigated and analyzed. The 25-pair AlN/Al(0.2)GaN(0.8) DBR shows a high reflectivity of 85% at 375nm with the stop-band width of 15nm. A strong light emission was observed from GaN photonic crystals within high reflectivity region of DBR. The emission wavelength can be also manipulated by varying the radius to lattice constant ratio. The photonic crystal bandedge mode was also characterized with three-dimensional plane-wave expansion (PWE) and finite-difference time-domain (FDTD) simulation. (C) 2011 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleTunable Light Emission from GaN-Based Photonic Crystal with Ultraviolet AlN/AlGaN Distributed Bragg Reflectoren_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.50.04DG09en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume50en_US
dc.citation.issue4en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000289722400090-
dc.citation.woscount2-
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