Growth of Semipolar InN(10(1)over-bar3) on LaAlO(3)(112) Substrate

Abstract

In this study, we report the growth and characterization of semipolar (10 (1) over bar3) InN films grown on LaAlO(3)(112) substrate by metalorganic molecular beam epitaxy. InN films were grown at various substrate temperatures in the range of 465-540 degrees C. Structural and optical properties of semipolar InN were investigated by high resolution X-ray diffraction, scanning electron microscopy, and photoluminescence measurements. The results show that semipolar (10 (1) over bar3) InN layers can be grown at 510 degrees C with the full-width at half maximum of the X-ray rocking curve about 1400 arcsec and electron mobility of 494 cm(2)V(-1)s(-1). (C) 2011 The Japan Society of Applied Physics