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dc.contributor.authorJuang, Fuh-Shyangen_US
dc.contributor.authorHong, Lin-Annen_US
dc.contributor.authorWang, Shun-Hsien_US
dc.contributor.authorTsai, Yu-Shengen_US
dc.contributor.authorGao, Ming-Hongen_US
dc.contributor.authorChi, Yunen_US
dc.contributor.authorShieh, Han-Pingen_US
dc.contributor.authorHsu, Jen-Sungen_US
dc.date.accessioned2014-12-08T15:11:47Z-
dc.date.available2014-12-08T15:11:47Z-
dc.date.issued2011-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.50.04DK04en_US
dc.identifier.urihttp://hdl.handle.net/11536/9041-
dc.description.abstractThis study is carried out to discuss how to reduce the driving voltage of blue phosphorescent organic light-emitting diodes (PHOLEDs) by using a thin double-emission layer. A hole transport-type host (TCTA) is inserted between the hole transport layer (TAPC) and the emitting layer (EML), constituting a buffer layer between them with the aim of improving charge carrier balance. Furthermore, in this study, we also utilize the interface between double light-emitting layers of devices by codoping them with a red phosphorescent dopant [Os(bpftz)(2)(PPh(2)Me)(2)]. An Os complex with a high-lying highest occupied molecular orbital (HOMO) energy level (trapping holes) is codoped at the interface between emitting layers and an exciton-formation zone is expanded to obtain a white PHOLED with high efficiency. From the results, the optimal structure of the white device exhibits a yield of 35 cd A(-1), a power efficiency of 22 lm W(-1), and CIE coordinates of (0.33; 0.38) at a luminance of 1000 cdm(-2). Furthermore, the power efficiency can be improved to 30 lm W(-1) by attaching the outcoupling enhancement film. (C) 2011 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titlePower Efficiency Improvement of White Phosphorescent Organic Light-Emitting Diode with Thin Double-Emitting Layers and Hole-Trapping Mechanismen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.50.04DK04en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume50en_US
dc.citation.issue4en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000289722400131-
dc.citation.woscount7-
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