完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Juang, Fuh-Shyang | en_US |
dc.contributor.author | Hong, Lin-Ann | en_US |
dc.contributor.author | Wang, Shun-Hsi | en_US |
dc.contributor.author | Tsai, Yu-Sheng | en_US |
dc.contributor.author | Gao, Ming-Hong | en_US |
dc.contributor.author | Chi, Yun | en_US |
dc.contributor.author | Shieh, Han-Ping | en_US |
dc.contributor.author | Hsu, Jen-Sung | en_US |
dc.date.accessioned | 2014-12-08T15:11:47Z | - |
dc.date.available | 2014-12-08T15:11:47Z | - |
dc.date.issued | 2011-04-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.50.04DK04 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/9041 | - |
dc.description.abstract | This study is carried out to discuss how to reduce the driving voltage of blue phosphorescent organic light-emitting diodes (PHOLEDs) by using a thin double-emission layer. A hole transport-type host (TCTA) is inserted between the hole transport layer (TAPC) and the emitting layer (EML), constituting a buffer layer between them with the aim of improving charge carrier balance. Furthermore, in this study, we also utilize the interface between double light-emitting layers of devices by codoping them with a red phosphorescent dopant [Os(bpftz)(2)(PPh(2)Me)(2)]. An Os complex with a high-lying highest occupied molecular orbital (HOMO) energy level (trapping holes) is codoped at the interface between emitting layers and an exciton-formation zone is expanded to obtain a white PHOLED with high efficiency. From the results, the optimal structure of the white device exhibits a yield of 35 cd A(-1), a power efficiency of 22 lm W(-1), and CIE coordinates of (0.33; 0.38) at a luminance of 1000 cdm(-2). Furthermore, the power efficiency can be improved to 30 lm W(-1) by attaching the outcoupling enhancement film. (C) 2011 The Japan Society of Applied Physics | en_US |
dc.language.iso | en_US | en_US |
dc.title | Power Efficiency Improvement of White Phosphorescent Organic Light-Emitting Diode with Thin Double-Emitting Layers and Hole-Trapping Mechanism | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.50.04DK04 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 50 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | 顯示科技研究所 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.contributor.department | Institute of Display | en_US |
dc.identifier.wosnumber | WOS:000289722400131 | - |
dc.citation.woscount | 7 | - |
顯示於類別: | 期刊論文 |