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dc.contributor.authorTojo, Yosukeen_US
dc.contributor.authorMiura, Atsushien_US
dc.contributor.authorYamashita, Ichiroen_US
dc.contributor.authorUraoka, Yukiharuen_US
dc.date.accessioned2014-12-08T15:11:48Z-
dc.date.available2014-12-08T15:11:48Z-
dc.date.issued2011-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.50.04DL12en_US
dc.identifier.urihttp://hdl.handle.net/11536/9045-
dc.description.abstractWe have proposed a new crystallization method for silicon thin films utilizing a cage-shaped protein (ferritin), called "bio-nano crystallization", which combines semiconductor processing technology and biotechnology. We utilized nickel nanoparticle-accommodated ferritins as metal catalysts, and succeeded in performing the crystallization. When the ferritin was adsorbed randomly onto the film, crystal nuclei were formed at random places, thus grain position was randomly distributed. In this study, we performed the positional controlled deposition of ferritin by electrostatic interaction for location control of crystal grains. Positively charged areas were formed on negatively charged SiO(2) using 3-amino-propyltriethoxysilane (APTES) as the electrostatic pattern. As a result, we could optimize Ni ferritin concentration to make a large adsorption difference between APTES and amorphous silicon. Therefore, nickel nanoparticles adsorption areas were controlled using APTES patterns. Furthermore, the location control of crystallized areas was achieved by optimizing the concentration of Ni ferritin and the APTES pattern. (C) 2011 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titlePositional Control of Crystal Grains in Silicon Thin Film Utilizing Cage-Shaped Proteinen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.50.04DL12en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume50en_US
dc.citation.issue4en_US
dc.citation.epageen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000289722400162-
dc.citation.woscount4-
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