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dc.contributor.authorChen, Ming-Jeren_US
dc.contributor.authorLee, Chien-Chihen_US
dc.contributor.authorCheng, Kuan-Haoen_US
dc.date.accessioned2014-12-08T15:11:49Z-
dc.date.available2014-12-08T15:11:49Z-
dc.date.issued2011-04-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2011.2105271en_US
dc.identifier.urihttp://hdl.handle.net/11536/9066-
dc.description.abstractSelf-consistently solving the Schrodinger and Poisson's equations in the six-band k . p context can yield the valence-band structure in the inversion layers of pMOSFETs. In this numerically demanding process, the central processing unit (CPU) time is extraordinarily long. To overcome the hurdle, we construct a novel computational accelerator to intrinsically boost a self-consistent six-band k . p simulation. This accelerator comprises a triangular-potential-based six-band k . p simulator, a hole effective mass approximation (EMA) technique, and an electron analogy version of the self-consistent Schrodinger and Poisson's equations solver. The outcome of the accelerator furnishes the initial solution of the confining electrostatic potential and is likely close to the realistic one, which is valid for different temperatures, substrate doping concentrations, inversion hole densities, and surface orientations. The results on (001) and (110) substrates are supported by those published in the literature. The overall CPU time is reduced down to around 8% of that without the accelerator. This is the first successful demonstration of the EMA in the self-consistent hole subband structure calculation. The application of the proposed accelerator to more general situations is projected as well.en_US
dc.language.isoen_USen_US
dc.subjectEffective massen_US
dc.subjectholeen_US
dc.subjectmodelen_US
dc.subjectmetal-oxide-semiconductor field-effect transistors (MOSFETs)en_US
dc.subjectSchrodinger and Poisson's equationsen_US
dc.subjectsimulationen_US
dc.subjecttwo-dimensional hole gas (2DHG)en_US
dc.subjectvalence-band structureen_US
dc.titleHole Effective Masses as a Booster of Self-Consistent Six-Band k . p Simulation in Inversion Layers of pMOSFETsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2011.2105271en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume58en_US
dc.citation.issue4en_US
dc.citation.spage931en_US
dc.citation.epage937en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000288676200003-
dc.citation.woscount4-
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