Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chou, Y. L. | en_US |
dc.contributor.author | Chung, Y. T. | en_US |
dc.contributor.author | Wang, Tahui | en_US |
dc.contributor.author | Ku, S. H. | en_US |
dc.contributor.author | Zou, N. K. | en_US |
dc.contributor.author | Chen, Vincent | en_US |
dc.contributor.author | Lu, W. P. | en_US |
dc.contributor.author | Chen, K. C. | en_US |
dc.contributor.author | Lu, Chih-Yuan | en_US |
dc.date.accessioned | 2014-12-08T15:11:50Z | - |
dc.date.available | 2014-12-08T15:11:50Z | - |
dc.date.issued | 2011-04-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2011.2109031 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/9073 | - |
dc.description.abstract | Discrete nitride program charge loss in a small-area SONOS Flash memory cell during retention is observed. Our measurement shows that a retention V(t) of a programmed SONOS cell exhibits a stepwise evolution with retention time. Individual single-program charge-loss-induced threshold voltage shifts (Delta V(t)) are characterized. We find the following: 1) The magnitude of Delta V(t) exhibits an exponential distribution, which is believed due to a current-path percolation effect caused by random program charges and substrate dopants, and 2) program-state V(t) retention loss has large variations in different cells and P/E cycles due to the percolation effect. We develop a Monte Carlo analysis to take into account the distribution of Delta V(t) and a tunneling front model to study the spread of a retention V(t) distribution in a SONOS Flash memory. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Variations of V(t) Retention Loss in a SONOS Flash Memory Due to a Current-Path Percolation Effect | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2011.2109031 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 32 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.spage | 458 | en_US |
dc.citation.epage | 460 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
Appears in Collections: | Articles |