Effect of Nitrogen Incorporation to AgInSbTe-SiO(2) Nanocomposite Thin Films Applied to Nonvolatile Floating Gate Memory

Abstract

Nonvolatile floating gate memory devices containing AgInSbTe-SiO(2) nanocomposites as the charge trapping layers prepared by target-attached sputtering method at various nitrogen incorporation conditions were investigated. The nitrogen incorporation was found to be essential to the nonvolatile memory characteristics and a significant memory window (Delta V(FB)) shift = 6.9 V and charge density = 7.1 x 10(12) cm(-2) at +/- 8 V gate voltage sweep could be obtained in the sample with satisfied charge retention property. Transmission electron microscopy revealed the nanocomposite layers contain Sb(2) Te nanocrystals about 5 nm in diameter which may serve as the charge storage traps of memory devices. X-ray photoelectron spectroscopy indicated nitrogen incorporation may alleviate the oxidation of AIST phase and promote the reduction of antimony oxide to form metallic Sb(2) Te phase in nanocomposite layers, leading to the good nonvolatile memory characteristics of NFGM device containing the AIST-SiO(2) nanocomposite as the charge-storage trap layer.