完整後設資料紀錄
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dc.contributor.authorChiang, Kuo-Changen_US
dc.contributor.authorHsieh, Tsung-Eongen_US
dc.date.accessioned2014-12-08T15:02:13Z-
dc.date.available2014-12-08T15:02:13Z-
dc.date.issued2011-03-01en_US
dc.identifier.issn0018-9464en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TMAG.2011.2108642en_US
dc.identifier.urihttp://hdl.handle.net/11536/907-
dc.description.abstractNonvolatile floating gate memory devices containing AgInSbTe-SiO(2) nanocomposites as the charge trapping layers prepared by target-attached sputtering method at various nitrogen incorporation conditions were investigated. The nitrogen incorporation was found to be essential to the nonvolatile memory characteristics and a significant memory window (Delta V(FB)) shift = 6.9 V and charge density = 7.1 x 10(12) cm(-2) at +/- 8 V gate voltage sweep could be obtained in the sample with satisfied charge retention property. Transmission electron microscopy revealed the nanocomposite layers contain Sb(2) Te nanocrystals about 5 nm in diameter which may serve as the charge storage traps of memory devices. X-ray photoelectron spectroscopy indicated nitrogen incorporation may alleviate the oxidation of AIST phase and promote the reduction of antimony oxide to form metallic Sb(2) Te phase in nanocomposite layers, leading to the good nonvolatile memory characteristics of NFGM device containing the AIST-SiO(2) nanocomposite as the charge-storage trap layer.en_US
dc.language.isoen_USen_US
dc.titleEffect of Nitrogen Incorporation to AgInSbTe-SiO(2) Nanocomposite Thin Films Applied to Nonvolatile Floating Gate Memoryen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1109/TMAG.2011.2108642en_US
dc.identifier.journalIEEE TRANSACTIONS ON MAGNETICSen_US
dc.citation.volume47en_US
dc.citation.issue3en_US
dc.citation.spage656en_US
dc.citation.epage662en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
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