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dc.contributor.author陳振芳en_US
dc.contributor.authorCHEN JENN-FANGen_US
dc.date.accessioned2014-12-13T10:31:34Z-
dc.date.available2014-12-13T10:31:34Z-
dc.date.issued2004en_US
dc.identifier.govdocNSC93-2112-M009-002zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/91038-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=979712&docId=182295en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.title砷化鎵氮/砷化鎵 量子井在應變與鬆弛狀態下的電性研究(III)zh_TW
dc.titleElectrical Studies of GaAsN/GaAs Quantum Well in Strained and Relaxed States(III)en_US
dc.typePlanen_US
dc.contributor.department交通大學電子物理系zh_TW
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