砷化鎵氮/砷化鎵 量子井在應變與鬆弛狀態下的電性研究(III)

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DC Field	Value	Language
dc.contributor.author	陳振芳	en_US
dc.contributor.author	CHEN JENN-FANG	en_US
dc.date.accessioned	2014-12-13T10:31:34Z	-
dc.date.available	2014-12-13T10:31:34Z	-
dc.date.issued	2004	en_US
dc.identifier.govdoc	NSC93-2112-M009-002	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/91038	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=979712&docId=182295	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	砷化鎵氮/砷化鎵量子井在應變與鬆弛狀態下的電性研究(III)	zh_TW
dc.title	Electrical Studies of GaAsN/GaAs Quantum Well in Strained and Relaxed States(III)	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子物理系	zh_TW
Appears in Collections:	Research Plans

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