完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | 陳振芳 | en_US |
dc.contributor.author | CHEN JENN-FANG | en_US |
dc.date.accessioned | 2014-12-13T10:31:34Z | - |
dc.date.available | 2014-12-13T10:31:34Z | - |
dc.date.issued | 2004 | en_US |
dc.identifier.govdoc | NSC93-2112-M009-002 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/91038 | - |
dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=979712&docId=182295 | en_US |
dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | 砷化鎵氮/砷化鎵 量子井在應變與鬆弛狀態下的電性研究(III) | zh_TW |
dc.title | Electrical Studies of GaAsN/GaAs Quantum Well in Strained and Relaxed States(III) | en_US |
dc.type | Plan | en_US |
dc.contributor.department | 交通大學電子物理系 | zh_TW |
顯示於類別: | 研究計畫 |