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dc.contributor.authorLin, Chia-Shengen_US
dc.contributor.authorChen, Ying-Chungen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorJian, Fu-Yenen_US
dc.contributor.authorLi, Hung-Weien_US
dc.contributor.authorChen, Yi-Chuanen_US
dc.contributor.authorChen, Te-Chihen_US
dc.contributor.authorTai, Ya-Hsiangen_US
dc.date.accessioned2014-12-08T15:11:54Z-
dc.date.available2014-12-08T15:11:54Z-
dc.date.issued2011-03-21en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3568895en_US
dc.identifier.urihttp://hdl.handle.net/11536/9131-
dc.description.abstractThis work investigates an improvement in anomalous on-current and subthreshold swing (SS) in Low-temperature polycrystalline-silicon thin-film transistors after positive gate bias stress. The experimental results reveal that the improved electric properties are due to the hole trapping at SiO(2) above the lightly doped drain regions, which causes a strong electric field at the gate corners. The effect of the hole trapping is to reduce the effective channel length and the SS. Besides, the stress-related electric field was also simulated by TCAD software to verify the mechanism above. (C) 2011 American Institute of Physics. [doi:10.1063/1.3568895]en_US
dc.language.isoen_USen_US
dc.titleAnomalous on-current and subthreshold swing improvement in low-temperature polycrystalline-silicon thin-film transistors under Gate bias stressen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3568895en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume98en_US
dc.citation.issue12en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000288808200038-
dc.citation.woscount1-
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