Effects of geometrical shape dispersion on inhomogeneous broadening of excitonic peaks of semiconductor nano-objects

Abstract

We present an efficient method for simulation of the inhomogeneous broadening of photoluminescence peaks of dispersive ensembles of semiconductor nano-objects. Using our mapping method for geometrical and material parameters of the objects, we managed to connect the position, asymmetry, and width of the photoluminescence emission peaks of ensembles of the objects to the actual dispersion of the geometrical shapes of the objects. The mapping method allows us to very efficiently reproduce and explain experimental data on the photoluminescence of dispersive ensembles of triple concentric GaAs/AlGaAs nano-rings, i.e., nano-objects with a very sophisticated three-dimensional geometry.