質子佈植應用於長波長1.31.mu.m VCSEL之研製 (II)

Abstract

操作在1300nm和1550nm的面射型雷射其發散角小、低臨界電流、操作頻率快、整合能力高，在光纖通訊的應用上極具低成本發光源的潛力。由於光纖在1300nm有較大的距離頻寬乘積，使用1300nm 面射型雷射將使資料傳輸量至少增加一倍。此外，面射型雷射具有低成本的優勢，容易製成多波長二維雷射陣列及適合和其他元件的整合能力使得單模1300nm和1550nm 面射型雷射可成為下一代DWDM系統的訊號源。 本計畫擬開發出1550 nm質子佈植型長波長面射型雷射 ，預計延續前一年開發1.31µm 長波長面射型雷射製程的經驗來開發1550 nm VCSEL 的製程並建立檢測其晶元之光電特性之能力。

The vertical cavity surface emitting lasers (VCSELs) which operated in long-wavelength 1.3 ？HHHH？HHHHm to 1.5 ？HHHH？HHHHm region possess advantages of small divergence angle, low threshold current, high frequency response, the ability to integrate with other electronics and low cost. The long wavelength VCSEL has been viewed as the most promising candidate for optical fiber communication system because of its advantages. The project is to realize long wavelength proton implanted 1550nm VCSEL. We expect to establish the processes and the ability to measure opto-electronic performances of 1550 nm VCSEL.