應用在Ku波段之摻雜及非摻雜氮化鎵高功率微波元件之製作及高頻特性量測與比較(II)

Full metadata record

DC Field	Value	Language
dc.contributor.author	張翼	en_US
dc.date.accessioned	2014-12-13T10:32:27Z	-
dc.date.available	2014-12-13T10:32:27Z	-
dc.date.issued	2004	en_US
dc.identifier.govdoc	NSC93-2215-E009-019	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/91569	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=1026657&docId=195169	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	應用在Ku波段之摻雜及非摻雜氮化鎵高功率微波元件之製作及高頻特性量測與比較(II)	zh_TW
dc.title	Comparision of the Properties of Delta-doped and Un-doped Gallium Nitride High Power Microwave Devices for Ku Band Application(II)	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學材料科學與工程系	zh_TW
Appears in Collections:	Research Plans