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dc.contributor.authorLiu, Zong-Youen_US
dc.contributor.authorTseng, Shin-Rongen_US
dc.contributor.authorChao, Yu-Chiangen_US
dc.contributor.authorChen, Chun-Yuen_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.contributor.authorHorng, Sheng-Fuen_US
dc.contributor.authorWu, Yu-Hsunen_US
dc.contributor.authorChen, Su-Huaen_US
dc.date.accessioned2014-12-08T15:11:58Z-
dc.date.available2014-12-08T15:11:58Z-
dc.date.issued2011-03-01en_US
dc.identifier.issn0379-6779en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.synthmet.2010.12.021en_US
dc.identifier.urihttp://hdl.handle.net/11536/9189-
dc.description.abstractSolution-processed electron transport layers (ETL) have been fabricated by solution process and applied in multilayer polymer light-emitting diodes with tris[2-(p-tolyl)pyridine]iridium(III) blended in poly(vinylcarbazole) as the emissive layer. Three kinds of small molecular electron transport materials, including 2,2',2 ''-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)(TPBi),3-(4-biphenyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (TAZ), and 4,7-diphenyl-1,10-phenanthroline (BPhen), are tested and dissolved in methanol to form electron transport layers by blade coating. Such electron transport layer provides efficient electron injection and electron transport ability in the devices. The efficiency of the devices with the combination of ETL and LiF/Al cathode reaches 21.5 cd/A at 10 V (4050 cd/m(2)). The efficiency of the devices without ETL are 3.5 cd/A (13 V) for LiF/Al cathode and 17 cd/A (7 V) for CsF/Al cathode at 1000 cd/m(2). The aggregation of the solution-processed ETL can be controlled by annealing temperature to further optimize the device performance to maximal efficiency of 53 cd/A. (C) 2010 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectBlade coatingen_US
dc.subjectSolution-processed electron transport layersen_US
dc.titleSolution-processed small molecular electron transport layer for multilayer polymer light-emitting diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.synthmet.2010.12.021en_US
dc.identifier.journalSYNTHETIC METALSen_US
dc.citation.volume161en_US
dc.citation.issue5-6en_US
dc.citation.spage426en_US
dc.citation.epage430en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000288929400011-
dc.citation.woscount15-
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