Dynamic stress effects on the reliability of poly-Si TFT

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Kuo, Yan-Fu	en_US
dc.contributor.author	Huang, Shih-Che	en_US
dc.contributor.author	Shih, Wei-Lun	en_US
dc.contributor.author	Tai, Ya-Hsiang	en_US
dc.date.accessioned	2014-12-08T15:11:58Z	-
dc.date.available	2014-12-08T15:11:58Z	-
dc.date.issued	2007	en_US
dc.identifier.isbn	978-957-28522-4-8	en_US
dc.identifier.uri	http://hdl.handle.net/11536/9190	-
dc.description.abstract	The degradation of poly-Si TFT under different gate pulse waveforms is investigated. The mobility degradation is analyzed with the lateral transient electric field and carrier numbers near the channel edges. A proposed index fairly depicts the device degradation, which is helpful in evaluating lifetime for the poly-Si TFT circuits.	en_US
dc.language.iso	en_US	en_US
dc.title	Dynamic stress effects on the reliability of poly-Si TFT	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007	en_US
dc.citation.spage	497	en_US
dc.citation.epage	499	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000258177700127	-
顯示於類別：	會議論文