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dc.contributor.author陳振芳en_US
dc.contributor.authorCHEN JENN-FANGen_US
dc.date.accessioned2014-12-13T10:33:19Z-
dc.date.available2014-12-13T10:33:19Z-
dc.date.issued2003en_US
dc.identifier.govdocNSC92-2112-M009-005zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/91996-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=838026&docId=158308en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.title砷化鎵氮/砷化鎵量子井在應變與鬆弛狀態下的電性研究(II)zh_TW
dc.titleElectrical Studies of GaAsN/GaAs Quantum Well in Strained and Relaxed States (II)en_US
dc.typePlanen_US
dc.contributor.department國立交通大學電子物理學系zh_TW
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