完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | 陳振芳 | en_US |
dc.contributor.author | CHEN JENN-FANG | en_US |
dc.date.accessioned | 2014-12-13T10:33:19Z | - |
dc.date.available | 2014-12-13T10:33:19Z | - |
dc.date.issued | 2003 | en_US |
dc.identifier.govdoc | NSC92-2112-M009-005 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/91996 | - |
dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=838026&docId=158308 | en_US |
dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | 砷化鎵氮/砷化鎵量子井在應變與鬆弛狀態下的電性研究(II) | zh_TW |
dc.title | Electrical Studies of GaAsN/GaAs Quantum Well in Strained and Relaxed States (II) | en_US |
dc.type | Plan | en_US |
dc.contributor.department | 國立交通大學電子物理學系 | zh_TW |
顯示於類別: | 研究計畫 |