Passivation of defects in a-Si : H TFTs with 150 degrees C supercritical fluids

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yang, Po-Yu	en_US
dc.contributor.author	Liu, Po-Tsun	en_US
dc.contributor.author	Chang, Ting-Chang	en_US
dc.contributor.author	Cheng, Yi-Li	en_US
dc.date.accessioned	2014-12-08T15:11:59Z	-
dc.date.available	2014-12-08T15:11:59Z	-
dc.date.issued	2007	en_US
dc.identifier.isbn	978-957-28522-4-8	en_US
dc.identifier.uri	http://hdl.handle.net/11536/9201	-
dc.description.abstract	In this study, the supercritical fluids act the transporter and deliver H2O molecule into the a-Si:H film for repairing defects. From experiment results, superior transfer characteristic is obtained after the treatment of supercritical fluids mixed with water and propyl-alcohol. Besides, density of states is also reduced significantly during this processing.	en_US
dc.language.iso	en_US	en_US
dc.title	Passivation of defects in a-Si : H TFTs with 150 degrees C supercritical fluids	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007	en_US
dc.citation.spage	500	en_US
dc.citation.epage	502	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000258177700128	-
顯示於類別：	會議論文