高透射率嵌附層、唯相移層、極短紫外光反射式圖罩吸收層與緩衝層之材料、電漿蝕刻與性質探討(I)

Full metadata record

DC Field	Value	Language
dc.contributor.author	龍文安	en_US
dc.contributor.author	Loong Wen-an	en_US
dc.date.accessioned	2014-12-13T10:33:37Z	-
dc.date.available	2014-12-13T10:33:37Z	-
dc.date.issued	2003	en_US
dc.identifier.govdoc	NSC92-2215-E009-066	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/92165	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=873559&docId=167362	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	高透射率嵌附層、唯相移層、極短紫外光反射式圖罩吸收層與緩衝層之材料、電漿蝕刻與性質探討(I)	zh_TW
dc.title	Studies on Materials, Plasma Etchings and Properties of High T% Embedded Layers, Shifter only Layers, Extreme UV Mask's Absorbers and Buffers (I)	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學應用化學系	zh_TW
Appears in Collections:	Research Plans

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