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dc.contributor.authorYang, Jung-Yenen_US
dc.contributor.authorCheng, Hui-Wenen_US
dc.contributor.authorChen, Yuen_US
dc.contributor.authorLi, Yimingen_US
dc.contributor.authorLin, Chi-Hungen_US
dc.contributor.authorLu, Kuang-Liehen_US
dc.date.accessioned2014-12-08T15:12:02Z-
dc.date.available2014-12-08T15:12:02Z-
dc.date.issued2011-03-01en_US
dc.identifier.issn1533-4880en_US
dc.identifier.urihttp://dx.doi.org/10.1166/jnn.2011.3553en_US
dc.identifier.urihttp://hdl.handle.net/11536/9227-
dc.description.abstractA low-cost, environment friendly and easily fabricated SERS-active substrate with low background signals has been developed by hydrothermal treatment of titanium thin films deposited on silicon substrate. Results from the experimental study revealed that Rhodamine 6G can be well resolved using gold-coated hydrothermally roughened TiO(2) substrates. The effect of surface enhancement by the hydrothermally roughened substrates enables rapid identification of Rhodamine 6G, and the enhancement capability is controllable by tuning the surface roughness of the substrates through varying treatment duration. The hydrothermally treated TiO(2) substrates also exhibit tunable wettability like that of the untreated ones.en_US
dc.language.isoen_USen_US
dc.subjectHydrothermal Treatmenten_US
dc.subjectSERS-Active Substrateen_US
dc.subjectTitaniumen_US
dc.subjectThin Filmsen_US
dc.subjectRhodamine 6Gen_US
dc.subjectTunable Wettabilityen_US
dc.titleHydrothermally Roughened Surface-Enhanced Raman Scattering-Active Substrates with Low Background Signals for Chemical Sensing Applicationen_US
dc.typeArticleen_US
dc.identifier.doi10.1166/jnn.2011.3553en_US
dc.identifier.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGYen_US
dc.citation.volume11en_US
dc.citation.issue3en_US
dc.citation.spage2012en_US
dc.citation.epage2017en_US
dc.contributor.department傳播研究所zh_TW
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentInstitute of Communication Studiesen_US
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000288102300025-
dc.citation.woscount1-
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