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dc.contributor.authorChen, WCen_US
dc.contributor.authorChang, CSen_US
dc.contributor.authorChan, SHen_US
dc.date.accessioned2014-12-08T15:02:14Z-
dc.date.available2014-12-08T15:02:14Z-
dc.date.issued1996-11-18en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/11536/924-
dc.description.abstractThe structure of a low-temperature GaAs layer grown by low-pressure metalorganic chemical vapor deposition with precursors of triethylgallium and arsine is reported. Dense particles containing Ga clusters are found in a high resistivity GaAs film grown at 420 degrees C, The size and concentration of particles are about 800-1000 nm and 7X10(11) cm(-3), respectively. (C) 1996 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleStructure of high resistivity GaAs film grown by low-temperature metalorganic chemical vapor depositionen_US
dc.typeArticleen_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume69en_US
dc.citation.issue21en_US
dc.citation.spage3239en_US
dc.citation.epage3241en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:A1996VT73100042-
dc.citation.woscount1-
顯示於類別:期刊論文