Structure of high resistivity GaAs film grown by low-temperature metalorganic chemical vapor deposition

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, WC	en_US
dc.contributor.author	Chang, CS	en_US
dc.contributor.author	Chan, SH	en_US
dc.date.accessioned	2014-12-08T15:02:14Z	-
dc.date.available	2014-12-08T15:02:14Z	-
dc.date.issued	1996-11-18	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://hdl.handle.net/11536/924	-
dc.description.abstract	The structure of a low-temperature GaAs layer grown by low-pressure metalorganic chemical vapor deposition with precursors of triethylgallium and arsine is reported. Dense particles containing Ga clusters are found in a high resistivity GaAs film grown at 420 degrees C, The size and concentration of particles are about 800-1000 nm and 7X10(11) cm(-3), respectively. (C) 1996 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Structure of high resistivity GaAs film grown by low-temperature metalorganic chemical vapor deposition	en_US
dc.type	Article	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	69	en_US
dc.citation.issue	21	en_US
dc.citation.spage	3239	en_US
dc.citation.epage	3241	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:A1996VT73100042	-
dc.citation.woscount	1	-
顯示於類別：	期刊論文