新型低溫複晶矽(矽鍺)電晶體及奈米碳管場發射元件---子計畫II：低溫快速金屬誘發之結晶層製作薄膜電晶體(I)

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DC Field	Value	Language
dc.contributor.author	馮明憲	en_US
dc.date.accessioned	2014-12-13T10:34:09Z	-
dc.date.available	2014-12-13T10:34:09Z	-
dc.date.issued	2003	en_US
dc.identifier.govdoc	NSC92-2215-E009-067	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/92561	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=873563&docId=167363	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	新型低溫複晶矽(矽鍺)電晶體及奈米碳管場發射元件---子計畫II：低溫快速金屬誘發之結晶層製作薄膜電晶體(I)	zh_TW
dc.title	Integration of Thin Film Transistors on Rapid, and Low Temperature Crystallized Active Layers via Metal Inducing Mechanisms (I)	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學材料科學工程研究所	zh_TW
Appears in Collections:	Research Plans

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