Fabrication and characterization of excimer laser crystallized double-gate low-temperature poly-silicon thin film transistors

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DC 欄位	值	語言
dc.contributor.author	Tsai, Chun-Chien	en_US
dc.contributor.author	Wei, Kai-Fang	en_US
dc.contributor.author	Lee, Yao-Jen	en_US
dc.contributor.author	Lee, I-Che	en_US
dc.contributor.author	Chen, Hsu-Hsin	en_US
dc.contributor.author	Wang, Jyh-Liang	en_US
dc.contributor.author	Chen, Hsai-Wei	en_US
dc.contributor.author	Cheng, Huang-Chung	en_US
dc.date.accessioned	2014-12-08T15:12:06Z	-
dc.date.available	2014-12-08T15:12:06Z	-
dc.date.issued	2007	en_US
dc.identifier.isbn	978-957-28522-4-8	en_US
dc.identifier.uri	http://hdl.handle.net/11536/9279	-
dc.description.abstract	In this letter, high-performance low-temperature poly-Silicon (LTPS) thin film transistors (TFTs) with double-gate (DG) structure and lateral silicon grains have been demonstrated by excimer laser crystallization (ELC). Therefore, the proposeed ELC DG TFTs exhibited better current-voltage characteristics as compared with the conventional solid-phase crystallized (SPC) poly-Si double-gate TFTs or conventional ELC top-gate (TG) TFTs.	en_US
dc.language.iso	en_US	en_US
dc.title	Fabrication and characterization of excimer laser crystallized double-gate low-temperature poly-silicon thin film transistors	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007	en_US
dc.citation.spage	529	en_US
dc.citation.epage	532	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000258177700137	-
顯示於類別：	會議論文