Gas sensing mechanism in pentacene-based OTFTs

Abstract

The ammonia gas sensing behaviors of pentacene-based organic thin-film transistors were characterized by analyzing parameters such as the threshold voltage, the field-effect mobility and the subthreshold swing. It was firstly found that the bias-induced carriers strongly enhanced the gas sensing. Bias-stress model successfully explained the experimental results. The ammonia-induced threshold voltage shift was probable due to the generation of nitrogen- or hydrogen-related defect states in the pentacene film.