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dc.contributor.authorHsu, Min-Hsiangen_US
dc.contributor.authorYu, Peichenen_US
dc.contributor.authorHuang, Jen-Hsienen_US
dc.contributor.authorChang, Chia-Huaen_US
dc.contributor.authorWu, Chien-Weien_US
dc.contributor.authorCheng, Yu-Chihen_US
dc.contributor.authorChu, Chih-Weien_US
dc.date.accessioned2014-12-08T15:12:08Z-
dc.date.available2014-12-08T15:12:08Z-
dc.date.issued2011-02-14en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3556565en_US
dc.identifier.urihttp://hdl.handle.net/11536/9305-
dc.description.abstractIn this paper, we present evidence of balanced electron and hole transport in polymer-fullerene based solar cells by means of embedded indium-tin-oxide nanoelectrodes. Enabled by a controllable electrochemical deposition, the individual nanoelectrodes are uniformly enclosed by a poly (3,4-ethylenedioxythiophene) hole-conducting layer, allowing a relatively short route for holes to reach the anode and hence increasing the effective hole mobility. Consequently, the power conversion efficiency and photogenerated current are maximized with a deposition condition of 50 mu C, where the ratio of the electron to hole mobility is nearly unity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3556565]en_US
dc.language.isoen_USen_US
dc.titleBalanced carrier transport in organic solar cells employing embedded indium-tin-oxide nanoelectrodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3556565en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume98en_US
dc.citation.issue7en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000287507200080-
dc.citation.woscount16-
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