| 標題: | 超薄氮化閘極氧化層奈米CMOS元件可靠性的新方法研究 New Methodologies for Reliability Evaluation of Sub-100nm Ultra-Thin SiO/sub N/ Gate Oxide CMOS Devices |
| 作者: | 莊紹勳 Chung Steve S 交通大學電子工程系 |
| 公開日期: | 2002 |
| 官方說明文件#: | NSC91-2215-E009-040 |
| URI: | http://hdl.handle.net/11536/93068 https://www.grb.gov.tw/search/planDetail?id=784389&docId=150766 |
| Appears in Collections: | Research Plans |
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- The incremental frequency charge pumping method: Extending the CMOS ultra-thin gate oxide measurement down to 1nm / Chung, Steve S.
- 深次微米與奈米金氧半元件氧化層界面與製程導致元件可靠性的探討 / 陳尚志;Shang-Jr Chen;莊紹勳;Steve S. Chung
- A novel and direct determination of the interface traps in sub-100nm CMOS devices with direct tunneling regime (12 similar to 16A) gate oxide / Chung, SS;Chen, SJ;Yang, CK;Cheng, SM;Lin, SH
- Reliability of ultrathin gate oxides for ULSI devices / Chang, CY;Chen, CC;Lin, HC;Liang, MS;Chien, CH
- Low leakage reliability characterization methodology for advanced CMOS with gate oxide in the 1nm range / Chung, SS;Feng, HJ;Hsieh, YS;Liu, A;Lin, WM
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