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dc.contributor.authorYang, Yu-Chengen_US
dc.contributor.authorHuang, Ting-Kaien_US
dc.contributor.authorChen, Yu-Liangen_US
dc.contributor.authorMevellec, Jean-Yvesen_US
dc.contributor.authorLefrant, Sergeen_US
dc.contributor.authorLee, Chi-Youngen_US
dc.contributor.authorChiu, Hsin-Tienen_US
dc.date.accessioned2014-12-08T15:12:08Z-
dc.date.available2014-12-08T15:12:08Z-
dc.date.issued2011-02-10en_US
dc.identifier.issn1932-7447en_US
dc.identifier.urihttp://dx.doi.org/10.1021/jp1073544en_US
dc.identifier.urihttp://hdl.handle.net/11536/9309-
dc.description.abstractWe demonstrate a facile fabrication of gold nanostructures including Au nanoplates (NPs), Au nanothorns (NTs), and Au nanowires (NWs) on indium tin oxide substrates via electrochemical growth. A simple two-electrode electrochemical deposition system was applied for the fabrication process. Dense Au nanostructures were grown directly on an Au seeding layer on the substrate. After 48 h, the Au NPs were 2-5 mu m in width and 150-200 nm in thickness. The Au NTs were 1-3 mu m in height, 300-500 nm in bottom side width, and 20 nm at the apex. The Au NWs were 30-80 nm in diameter and about 20 mu m in length. The entire process was template-free and economical. We investigated the correlation between surface plasmon resonance (SPR) and surface enhanced scattering (SERS) effects of the Au nanostructures with different excitation wavelengths. By using the SPR absorption maxima of the nanostructures as the excitation wavelengths for SERS, the highest SERS enhancements were achieved. SERS effects of the Au NWs were investigated further. We discovered that the length and the density of the Au NWs affected the SERS performance significantly. The result is rationalized by the amount of "hot spot" generated at the crossing of the Au NWs. With the Au NWs, Rhodamine 6G can be detected at a concentration as low as 10(-9) M.en_US
dc.language.isoen_USen_US
dc.titleElectrochemical Growth of Gold Nanostructures for Surface-Enhanced Raman Scatteringen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/jp1073544en_US
dc.identifier.journalJOURNAL OF PHYSICAL CHEMISTRY Cen_US
dc.citation.volume115en_US
dc.citation.issue5en_US
dc.citation.spage1932en_US
dc.citation.epage1939en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000286868600073-
dc.citation.woscount21-
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