藉著晶圓接合從藍寶石基板上剝離氮化鎵發光二極體

Full metadata record

DC Field	Value	Language
dc.contributor.author	吳耀銓	en_US
dc.contributor.author	WU YEWCHUNG SERMON	en_US
dc.date.accessioned	2014-12-13T10:34:59Z	-
dc.date.available	2014-12-13T10:34:59Z	-
dc.date.issued	2013	en_US
dc.identifier.govdoc	NSC101-2221-E009-052-MY3	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/93122	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=2848065&docId=402936	en_US
dc.description.abstract	本計畫是利用(1)在氮化鎵磊晶層與藍寶石基板間的產生凹凸狀的空隙結構。加上（2）晶圓接合後降溫時，造成在氮化鎵與藍寶石介面間的熱應力集中而剝離。主要有2 種方法:(1)濕式蝕刻藍寶石方式 (1)濕式蝕刻氮化鎵方式。磊晶後，再藉著晶圓接合從藍寶石基板上剝離氮化鎵發光二極體。	zh_TW
dc.description.abstract	This project is about lift-off GaN film using 2 steps: (1) reduced the interface between GaN and Sapphire substrate, and (2)separate them using wafer bonding processes. This is because the stress concentration on the interface. Two methods will be used (1) wet etched sapphire and (2) wet etched GaN.	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	剝離氮化鎵磊晶層	zh_TW
dc.subject	晶圓接合	zh_TW
dc.subject	濕式蝕刻藍寶石	zh_TW
dc.subject	濕式蝕刻氮化鎵	zh_TW
dc.subject	lift-off GaN film	en_US
dc.subject	wafer bonding processes	en_US
dc.subject	wet etched sapphire	en_US
dc.subject	wet etched GaN	en_US
dc.title	藉著晶圓接合從藍寶石基板上剝離氮化鎵發光二極體	zh_TW
dc.title	Lift-Off GaN LED epitaxy layer from sapphire substrate by wafer bonding processes	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學材料科學與工程學系（所）	zh_TW
Appears in Collections:	Research Plans