Spin-on ZnO thin film transistors with oxidation treatment

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DC Field	Value	Language
dc.contributor.author	Huang, Chen-Shuo	en_US
dc.contributor.author	Chou, Yi-Teh	en_US
dc.contributor.author	Liu, Po-Tsun	en_US
dc.contributor.author	Chung, Wan-Fang	en_US
dc.contributor.author	Huang, Chien-Jui	en_US
dc.date.accessioned	2014-12-08T15:12:09Z	-
dc.date.available	2014-12-08T15:12:09Z	-
dc.date.issued	2007	en_US
dc.identifier.isbn	978-957-28522-4-8	en_US
dc.identifier.uri	http://hdl.handle.net/11536/9312	-
dc.description.abstract	The ZnO TFTs was fabricated by spin-on method and investigated by modulating deposition environments. It was discovered that the conductivity of ZnO TFTs can be obviously changed by modulating curing temperature and the performances can be improved by incorporating oxygen.	en_US
dc.language.iso	en_US	en_US
dc.title	Spin-on ZnO thin film transistors with oxidation treatment	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007	en_US
dc.citation.spage	557	en_US
dc.citation.epage	559	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000258177700145	-
Appears in Collections:	Conferences Paper